IndiumV3, Main, Repository, bibRecord, 000C54

Gigahertz Operation of a-IGZO Schottky Diodes

Identifieur interne : 000C54 ( Main/Repository ); précédent : 000C53; suivant : 000C55

Gigahertz Operation of a-IGZO Schottky Diodes

Auteurs : RBID : Pascal:13-0356937

Descripteurs français

Pascal (Inist)
- Diode barrière Schottky, Matériau amorphe, Fréquence coupure, Effet redresseur, Densité courant, Haute performance, Modélisation, Contact électrique, Barrière Schottky, Contact ohmique, Optimisation, Semiconducteur amorphe, Effet concentration, Profil dopage, Evaluation performance, Redresseur, Programme SPICE, Mesure électrique, Dopage, Radiofréquence, Oxyde d'indium, Oxyde de gallium, Oxyde de zinc, Configuration top contact.
Wicri :
- concept : Matériau amorphe, Dopage.

English descriptors

KwdEn :
- Amorphous material, Amorphous semiconductors, Concentration effect, Current density, Cut off frequency, Doping, Doping profile, Electric contact, Electrical measurement, Gallium oxide, High performance, Indium oxide, Modeling, Ohmic contact, Optimization, Performance evaluation, Radiofrequency, Rectifier, Rectifier effect, SPICE, Schottky barrier, Schottky barrier diode, Top contact configuration, Zinc oxide.

Abstract

We present vertical Schottky diodes based on amorphous IGZO with an unprecedented cutoff frequency of 1.8 GHz at 0 V bias. These diodes have a rectification ratio of up to 10⁸ at ±1 V and a current density of 800 A/cm² at +1 V. The diodes' high performance is achieved by understanding and modeling of the two contacts, a Schottky contact using Pd at the bottom and an ohmic contact formed at the top. In particular, the choice of the latter top contact combined with an optimized IGZO layer thickness proves to be crucial: we show how the semiconductor layer thickness and the nature of the top metal modify the doping concentration profile of the IGZO film, which we fully measure and characterize, and how that affects the performance and optimization of the diodes. We measure our diodes in rectifiers, which operate up to 1.1 GHz. Finally, we show that these rectifiers can be fully modeled in SPICE using diode parameters extracted from electrical measurements.

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Le document en format XML

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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Amorphous material</term>
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<term>Cut off frequency</term>
<term>Doping</term>
<term>Doping profile</term>
<term>Electric contact</term>
<term>Electrical measurement</term>
<term>Gallium oxide</term>
<term>High performance</term>
<term>Indium oxide</term>
<term>Modeling</term>
<term>Ohmic contact</term>
<term>Optimization</term>
<term>Performance evaluation</term>
<term>Radiofrequency</term>
<term>Rectifier</term>
<term>Rectifier effect</term>
<term>SPICE</term>
<term>Schottky barrier</term>
<term>Schottky barrier diode</term>
<term>Top contact configuration</term>
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<term>Semiconducteur amorphe</term>
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<term>Profil dopage</term>
<term>Evaluation performance</term>
<term>Redresseur</term>
<term>Programme SPICE</term>
<term>Mesure électrique</term>
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<term>Oxyde d'indium</term>
<term>Oxyde de gallium</term>
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<front><div type="abstract" xml:lang="en">We present vertical Schottky diodes based on amorphous IGZO with an unprecedented cutoff frequency of 1.8 GHz at 0 V bias. These diodes have a rectification ratio of up to 10<sup>8</sup>
 at ±1 V and a current density of 800 A/cm<sup>2</sup>
 at +1 V. The diodes' high performance is achieved by understanding and modeling of the two contacts, a Schottky contact using Pd at the bottom and an ohmic contact formed at the top. In particular, the choice of the latter top contact combined with an optimized IGZO layer thickness proves to be crucial: we show how the semiconductor layer thickness and the nature of the top metal modify the doping concentration profile of the IGZO film, which we fully measure and characterize, and how that affects the performance and optimization of the diodes. We measure our diodes in rectifiers, which operate up to 1.1 GHz. Finally, we show that these rectifiers can be fully modeled in SPICE using diode parameters extracted from electrical measurements.</div>
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 at ±1 V and a current density of 800 A/cm<sup>2</sup>
 at +1 V. The diodes' high performance is achieved by understanding and modeling of the two contacts, a Schottky contact using Pd at the bottom and an ohmic contact formed at the top. In particular, the choice of the latter top contact combined with an optimized IGZO layer thickness proves to be crucial: we show how the semiconductor layer thickness and the nature of the top metal modify the doping concentration profile of the IGZO film, which we fully measure and characterize, and how that affects the performance and optimization of the diodes. We measure our diodes in rectifiers, which operate up to 1.1 GHz. Finally, we show that these rectifiers can be fully modeled in SPICE using diode parameters extracted from electrical measurements.</s0>
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<s5>11</s5>
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<s5>11</s5>
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<fC03 i1="11" i2="X" l="SPA"><s0>Optimización</s0>
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<s5>14</s5>
</fC03>
<fC03 i1="15" i2="X" l="FRE"><s0>Evaluation performance</s0>
<s5>15</s5>
</fC03>
<fC03 i1="15" i2="X" l="ENG"><s0>Performance evaluation</s0>
<s5>15</s5>
</fC03>
<fC03 i1="15" i2="X" l="SPA"><s0>Evaluación prestación</s0>
<s5>15</s5>
</fC03>
<fC03 i1="16" i2="X" l="FRE"><s0>Redresseur</s0>
<s5>16</s5>
</fC03>
<fC03 i1="16" i2="X" l="ENG"><s0>Rectifier</s0>
<s5>16</s5>
</fC03>
<fC03 i1="16" i2="X" l="SPA"><s0>Rectificador</s0>
<s5>16</s5>
</fC03>
<fC03 i1="17" i2="3" l="FRE"><s0>Programme SPICE</s0>
<s5>17</s5>
</fC03>
<fC03 i1="17" i2="3" l="ENG"><s0>SPICE</s0>
<s5>17</s5>
</fC03>
<fC03 i1="18" i2="X" l="FRE"><s0>Mesure électrique</s0>
<s5>18</s5>
</fC03>
<fC03 i1="18" i2="X" l="ENG"><s0>Electrical measurement</s0>
<s5>18</s5>
</fC03>
<fC03 i1="18" i2="X" l="SPA"><s0>Medida eléctrica</s0>
<s5>18</s5>
</fC03>
<fC03 i1="19" i2="X" l="FRE"><s0>Dopage</s0>
<s5>19</s5>
</fC03>
<fC03 i1="19" i2="X" l="ENG"><s0>Doping</s0>
<s5>19</s5>
</fC03>
<fC03 i1="19" i2="X" l="SPA"><s0>Doping</s0>
<s5>19</s5>
</fC03>
<fC03 i1="20" i2="X" l="FRE"><s0>Radiofréquence</s0>
<s5>20</s5>
</fC03>
<fC03 i1="20" i2="X" l="ENG"><s0>Radiofrequency</s0>
<s5>20</s5>
</fC03>
<fC03 i1="20" i2="X" l="SPA"><s0>Radiofrecuencia</s0>
<s5>20</s5>
</fC03>
<fC03 i1="21" i2="X" l="FRE"><s0>Oxyde d'indium</s0>
<s5>22</s5>
</fC03>
<fC03 i1="21" i2="X" l="ENG"><s0>Indium oxide</s0>
<s5>22</s5>
</fC03>
<fC03 i1="21" i2="X" l="SPA"><s0>Indio óxido</s0>
<s5>22</s5>
</fC03>
<fC03 i1="22" i2="X" l="FRE"><s0>Oxyde de gallium</s0>
<s5>23</s5>
</fC03>
<fC03 i1="22" i2="X" l="ENG"><s0>Gallium oxide</s0>
<s5>23</s5>
</fC03>
<fC03 i1="22" i2="X" l="SPA"><s0>Galio óxido</s0>
<s5>23</s5>
</fC03>
<fC03 i1="23" i2="X" l="FRE"><s0>Oxyde de zinc</s0>
<s5>24</s5>
</fC03>
<fC03 i1="23" i2="X" l="ENG"><s0>Zinc oxide</s0>
<s5>24</s5>
</fC03>
<fC03 i1="23" i2="X" l="SPA"><s0>Zinc óxido</s0>
<s5>24</s5>
</fC03>
<fC03 i1="24" i2="X" l="FRE"><s0>Configuration top contact</s0>
<s4>CD</s4>
<s5>96</s5>
</fC03>
<fC03 i1="24" i2="X" l="ENG"><s0>Top contact configuration</s0>
<s4>CD</s4>
<s5>96</s5>
</fC03>
<fN21><s1>336</s1>
</fN21>
<fN44 i1="01"><s1>OTO</s1>
</fN44>
<fN82><s1>OTO</s1>
</fN82>
</pA>
</standard>
</inist>
</record>

Pour manipuler ce document sous Unix (Dilib)

EXPLOR_STEP=IndiumV3/Data/Main/Repository

HfdSelect -h $EXPLOR_STEP/biblio.hfd -nk 000C54 | SxmlIndent | more

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{{Explor lien
   |wiki=   *** parameter Area/wikiCode missing *** 
   |area=    IndiumV3
   |flux=    Main
   |étape=   Repository
   |type=    RBID
   |clé=     Pascal:13-0356937
   |texte=   Gigahertz Operation of a-IGZO Schottky Diodes
}}

This area was generated with Dilib version V0.5.77.
Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024

	Serveur d'exploration sur l'Indium
	Attention, ce site est en cours de développement ! Attention, site généré par des moyens informatiques à partir de corpus bruts. Les informations ne sont donc pas validées.

Serveur d'exploration sur l'Indium

Gigahertz Operation of a-IGZO Schottky Diodes

Gigahertz Operation of a-IGZO Schottky Diodes

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

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